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Although segregation depends on the growth method, composition and growth conditions used, the present results indicate that the composition of single crystal LTGA tends to deviate toward the Al-rich condition from the initial composition in the range from 0.
Furthermore, it has been reported that Al-substituted langatate has higher resistivity than LTG. The Ta concentration in the single crystals tended to be lower than that in the feed rod and decreased as the growth- p O 2o114 increased. A Z-oriented LTG single crystal was used as a seed.
This work was supported in part by 2o41 Grant-in-Aid to promote basic research by research personnel in private-sector business No. 214 La, Ga, and O concentrations of the single crystal and feed rod were thus approximately the same.
Measurements of ionic transport number and electrical conductivity The ionic transport number was measured for the LTGA single crystal by the electromotive force emf method. The tube was isotropically pressed at 5. During growth, the oxygen partial pressure growth- p O 2 was held between 0.
PDB 2o14 function and biology ‹ Protein Data Bank in Europe (PDBe) ‹ EMBL-EBI
Graphical overview of model and experimental structure information available for a specific protein entry. The symbols represent experimental points and the dotted lines are the power approximation fits. Chemical compositions of single crystals and feed rods where p O 2 represents growth- p O 2 and feed rod fabricated p O 2respectively.
Since the activation energy for LTGA is 1.
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The electrical conductivity increases with growth- p O 2 and the conduction is electronic, and thus the carrier is a hole according to the Kroger-Vink diagram. In contrast, the Al concentration in the single crystals grown under the growth- p O 2in the range from 0.
When the substitutional Al is doubly ionized and yields two holes at higher temperatures, the quasichemical reaction and hole concentration are given by. Since stoichiometric LTGA is not congruent, the single crystal grown from the stoichiometric melt was Ta-poor and Al-rich, where Al atoms were substituted not only in Ga sites but also in Ta sites. The dependence of the electrical conductivity on the growth-pO2 decreased as temperature increased.
The dependence of the electrical conductivity on the growth- p O 2 decreased as temperature increased.