2O14 WALLPAPER DOWNLOAD

2o14

Thus, to fabricate specimens for electrical conductivity and chemical composition measurements, single crystals were cut perpendicular to the Z-axis and 6 mm from the growth-start position; disk-shaped specimens with 1. The dependence of the growth- p O 2 on conductivities was studied based on the Kroger-Vink diagram. The La, Ga, and O concentrations of the single crystal and feed rod were thus approximately the same. Either your web browser doesn’t support Javascript or it is currently turned off. The temperature rise increases ionic conductivity with the dominant carrier being oxygen defects formed by the anion Frenkel reaction. Europe PMC requires Javascript to function effectively. The symbols represent experimental points and the dotted lines are the power approximation fits.

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Although segregation depends on the growth method, composition and growth conditions used, the present results indicate that the composition of single crystal LTGA tends to deviate toward the Al-rich condition from the initial composition in the range from 0.

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This functionality is available only if Javascript is enabled in your browser. LTG, 2o41 has the highest electrical resistivity among LGS type crystals, 2 is considered to be a candidate piezoelectric material for combustion pressure sensors used at high temperatures.

Furthermore, it has been reported that Al-substituted langatate has higher resistivity than LTG. The Ta concentration in the single crystals tended to be lower than that in the feed rod and decreased as the growth- p O 2o114 increased. A Z-oriented LTG single crystal was used as a seed.

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Control 51 Open in a separate window. The ionic transport number was measured for the LTGA single crystal by the electromotive force emf method. In the latter case, please turn on Javascript support in your web browser and reload this page.

Please activate Javascript in your Browser, thank you. Ritsuko Yaokawa 1 Citizen Holdings Co. Template-Centric Models TC result from using a specific solved structure as a 214 to build a number of models for a series of target protein sequences. Since the carriers are holes, the possible defect reaction is related to excess 2o144, metal vacancy, or substitution with lower valence element. Europe PMC requires Javascript to function effectively.

This work was supported in part by 2o41 Grant-in-Aid to promote basic research by research personnel in private-sector business No. 214 La, Ga, and O concentrations of the single crystal and feed rod were thus approximately the same.

Measurements of ionic transport number and electrical conductivity The ionic transport number was measured for the LTGA single crystal by the electromotive force emf method. The tube was isotropically pressed at 5. During growth, the oxygen partial pressure growth- p O 2 was held between 0.

PDB 2o14 function and biology ‹ Protein Data Bank in Europe (PDBe) ‹ EMBL-EBI

Graphical overview of model and experimental structure information available for a specific protein entry. The symbols represent experimental points and the dotted lines are the power approximation fits. Chemical compositions of single crystals and feed rods where p O 2 represents growth- p O 2 and feed rod fabricated p O 2respectively.

Since the activation energy for LTGA is 1.

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Either your web browser doesn’t support Javascript or it is currently turned off. An infrared convergence-type apparatus Crystal System Corp. The dependence of the growth- p O 2 on conductivities was studied based on the 2k14 diagram. The electrical conductivity increased with increasing growth- p O 2and the growth- p O 2 dependence of electrical conductivity declined with temperature. It should be noted that the predominant carrier is a hole 2o4 to not interstitial oxygen but substitutional Al in a Ta site.

Therefore, it is important to study the electrical conduction mechanism in LTGA. Would you like to submit the target protein sequence to our registered modeling services now?

The electrical conductivity increases with growth- p O 2 and the conduction is electronic, and thus the carrier is a hole according to the Kroger-Vink diagram. In contrast, the Al concentration in the single crystals grown under the growth- p O 2in the range from 0.

When the substitutional Al is doubly ionized and yields two holes at higher temperatures, the quasichemical reaction and hole concentration are given by. Since stoichiometric LTGA is not congruent, the single crystal grown from the stoichiometric melt was Ta-poor and Al-rich, where Al atoms were substituted not only in Ga sites but also in Ta sites. The dependence of the electrical conductivity on the growth-pO2 decreased as temperature increased.

The dependence of the electrical conductivity on the growth- p O 2 decreased as temperature increased.

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